Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon.

A surface-illuminated photoconductive detector based on Ge0.91Sn0.09 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2µm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can b...

Infrared Spectral Detectivity of Cr‐doped GaAs

Germanium:gallium photoconductors for far infrared heterodyne detection.

Highly compensated Ge:Ga photoconductors have been fabricated and evaluated for high bandwidth heterodyne detection. Bandwidths up to 60 MHz have been obtained with corresponding current responsivity of 0.01 A/W.

Mid-Wave Infrared Photoconductors Based on Black Phosphorus-Arsenic Alloys.

Black phosphorus (b-P) and more recently black phosphorus-arsenic alloys (b-PAs) are candidate 2D materials for the detection of mid-wave and potentially long-wave infrared radiation. However, studies to date have utilized laser-based measurements to extract device performance and the responsivity of these detectors. As such, their performance under thermal radiation and spectral response has n...

Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers

Ge1−xSnx epitaxial heterostructures are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. Here we propose a suitable explanation for their temperature-dependent photoluminescence (PL) that is based upon the so far disregarded optical activity of dislocations. By working at the onset of plastic relaxation, which occurs whenever the epilayer releas...